Ray Chen holds the Cullen Trust for Higher Education Endowed Professorship at UT Austin. He received his BS degree in Physics from National Tsing-Hua University in 1980 in Taiwan and his MS degree in physics in 1983 and his PhD degree in Electrical Engineering in 1988, both from the University of California. He joined UT Austin as a faculty to start optical interconnect research program in the ECE Department in 1992. Prior to his UT’s professorship, Chen was working as a research scientist, manager and director of the Department of Electrooptic Engineering in Physical Optics Corporation in Torrance, California from 1988 to 1992.

R. Fabian Pease received the BA, MA and PhD degrees from Cambridge University. His doctoral research was to improve the resolution of the scanning electron microscope to better than 10nm. In 1964 he was appointed Assistant Professor of Electrical Engineering at University of California where he continued his research into scanning electron microscopy. In 1967 he joined Bell Telephone Laboratories where he first researched digital television and then supervised a group developing electron beam lithography. His group demonstrated the first large-scale integrated circuit made with electron beam lithography and developed the industry standard process for manufacturing photomasks. Since 1978 he has been a professor of electrical engineering at Stanford University where he holds the William Ayer Chair. 

Professor John A. Rogers obtained BA and BS degrees in chemistry and in physics from the University of Texas, Austin, in 1989. From MIT, he received SM degrees in physics and in chemistry in 1992 and the PhD degree in physical chemistry in 1995. From 1995 to 1997, Rogers was a Junior Fellow in the Harvard University Society of Fellows. During this time he also served as a Director for Active Impulse Systems, a company based on his PhD research that he co-founded in 1995 and which was acquired by a large company in 1998. He joined Bell Laboratories as a Member of Technical Staff in the Condensed Matter Physics Research Department in 1997, and served as Director of this department from 2000-2002. He currently holds a primary appointment in the Department of Materials Science and Engineering and is affiliated with the Beckman Institute, the Materials Research Laboratory as well as the Departments of Electrical and Computer Engineering, Mechanical Science and Engineering and Chemistry.

Website:www.ece.rutgers.edu/~wjiangnj

Seth Bank received the B.S. degree from the University of Illinois at Urbana-Champaign in 1999 and the M.S. and Ph.D. degrees in 2003 and 2006 from Stanford University, all in electrical engineering. In 2006, he was a post-doctoral scholar at the University of California at Santa Barbara. He joined the faculty of The University of Texas at Austin in the spring of 2007 as an Assistant Professor in the Electrical and Computer Engineering Department. His current research interests are in the development new nanophotonic and nanoelectronics devices (design, growth, and fabrication). In particular, he is currently focused on the molecular beam epitaxial (MBE) growth and characterization of new materials including group-IV heterostructures, dilute-nitride semiconductors (e.g. GaInNAsSb) and metal/semiconductor nanocomposites (e.g. ErAs nanoparticles in GaAs) and their application to silicon-based lasers, mid-IR lasers, THz generation and sensing, and high-speed transistors. He has received a 2008 DARPA Young Faculty Award (YFA), several “Best Paper” awards at national and international conferences, and coauthored over 120 papers and presentations.

Website: http://lase.ece.utexas.edu

Dr. Emanuel Tutuc earned his Ph.D. in physics from Princeton University in 2004 and worked as a post-doctoral researcher at IBM TJ Watson Research Center before joining The University of Texas at Austin faculty in 2006.

Dr. Tutuc researches the electronic properties of quantum confined devices, as well as the growth of semiconductor nanostructures for electronic device applications. He is specifically interested in utilizing silicon, germanium, and III-V compound semiconductor nanowires in electronic devices. The experiments done in his group combine state-of-the-art semiconductor growth and patterning techniques, such as chemical vapor deposition and electron beam lithography, with semiconductor device characterization down to low temperatures and in high magnetic field. Dr. Tutuc’s work will help advance the state of the art of electronic devices.

I am interested in all aspects of nonlinear laser-plasma interactions at ultra-high intensities. This is one of the most rapidly growing fields of plasma physics which concerns itself with the nonlinear phenomena which take place when a laser pulse with intensity I > 10¹⁸ W/cm² interacts with matter. At such intensities, the words "matter" and "plasma" can be used interchangeably because of the complete tunneling ionization of what used to be a gas/solid. Moreover, the jitter energy of the plasma electrons is equal to its rest mass (E = mc² = 0.5 Mev , remember Mr. Einstein?), and electron dynamics becomes strongly relativistic.